2N7000 Small Signal N-MOSFET 60V 200mA TO-92 Tools and Consumables High efficiency with rated load

High efficiency with rated load 75% at 100V AC

The  PIC16F628 have enhanced core features

Model BR3510  Type Bridge rectifier diode Working Peak Reverse Voltage 1000 V RMS Reverse Voltage V(RMS)  700 V Average Forward Rectified Output Current 35 A Peak Reverse Current at 25°C 10µA Operating and Storage Temperature Range -55°C to 150°C

Momentary: Press and hold = on

2N7000 Small Signal N-MOSFET 60V 200mA TO-92 Tools and Consumables High efficiency with rated loadThe 2N7000 is a N channel enhancement mode Field Effect Transistor is produced using high cell density, DMOS technology. This very high density process has been designed to minimize on state resistance while provide rugged, reliable and fast switching performance. Features: Small signal N Channel MOSFET. Drain Source Voltage (VDS) is 60V. Continuous Drain Current (ID) is 200mA. Pulsed Drain Current (ID peak) is 500mA. Gate threshold voltage (VGS th)